Semiconductor device and method for manufacturing the same
US8896051B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 31, 2012 |
| Grant date | Nov 25, 2014 |
| Priority date | — |
| Expiry date | Dec 6, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a semiconductor device includes a lower layer connection object, a stacked body, an insulating film, and a via. The stacked body has a plurality of insulating layers and a plurality of electrode layers alternately stacked on the lower layer connection object. The stacked body has a staircase structure unit. The via connects uppermost electrode layer at each step of the staircase structure unit and the lower layer connection object through the via hole. The via has an upper part provided on and in contact with a top face of the uppermost electrode layer, and a penetrating part provided to be thinner than the upper part inside the insulating film in the via hole. The penetrating part connects the upper part and the lower layer connection object.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.