Channel surface technique for fabrication of FinFET devices
US8896072B2 · kind B2 · utility
5Cited by
3References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 8, 2013 |
| Grant date | Nov 25, 2014 |
| Priority date | — |
| Expiry date | Jan 8, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
Abstract
A FinFET (p-channel) device is formed having a fin structure with sloped or angled sidewalls (e.g., a pyramidal or trapezoidal shaped cross-section shape). When using conventional semiconductor substrates having a (100) surface orientation, the fin structure is formed in a way (groove etching) which results in sloped or angled sidewalls having a (111) surface orientation. This characteristic substantially increases hole mobility as compared to conventional fin structures having vertical sidewalls.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.