Semiconductor device
US8896084B2 · kind B2 · utility
Assignees
Inventor
Key dates
| Filing date | Feb 23, 2011 |
| Grant date | Nov 25, 2014 |
| Priority date | — |
| Expiry date | Jun 18, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A semiconductor device includes a first semiconductor region of a first conductivity type and formed of a material having a band gap wider than that of silicon; a first layer selectively disposed on a surface of and forming a first junction with the first semiconductor region; a second layer selectively disposed on the first semiconductor region and forming a second junction with the first semiconductor region; a first diode formed by a region including the first junction; a second diode formed by a region including the second junction; and a fourth semiconductor region of a second conductivity type and disposed in the first semiconductor region, between and contacting the first and second junctions. A recess and elevated portion are disposed on the first semiconductor region. The first and the second junctions are formed at different depths. The second diode has a lower built-in potential than the first diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.