Electrical characterization of semiconductor materials
US8896338B2 · kind B2 · utility
Inventor
Key dates
| Filing date | Jun 14, 2012 |
| Grant date | Nov 25, 2014 |
| Priority date | — |
| Expiry date | Jun 20, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2648
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for characterizing the electronic properties of a semiconductor sample by exploiting transients in measured photoconductance, the transients being induced by illuminating the semiconductor sample with a small probing illumination that is superimposed over a larger background illumination. In one embodiment, a pulse-type probing illumination is utilized, with either the intensity of the probing illumination being gradually reduced or the intensity of the background illumination being gradually increased until the measured photoconductance rise and decay in the sample are substantially exponential. In another embodiment, a continuous probing illumination with a sinusoidally-modulated intensity is utilized, the modulated intensity of the probing illumination being gradually adjusted until the measured photoconductance is linearly dependent thereupon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.