Patent · US Active

Memory device, method of operating the same, and electronic device having the memory device

US8897055B2 · kind B2 · utility

1Cited by
5References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 20, 2013
Grant dateNov 25, 2014
Priority date
Expiry dateMay 31, 2033

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C29/802
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A memory device includes a memory cell array and a fuse device. The fuse device includes a fuse cell array and a fuse control circuit. The fuse cell array includes a first fuse cell sub-array which stores first data associated with operation of the fuse control circuit, and a second fuse cell sub-array which stores second data associated with operation of the memory device. The fuse control circuit is electrically coupled to the first and second fuse cell sub-arrays, and is configured to read the first and second data from the first and second fuse cell sub-arrays, respectively.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.