Multilevel differential sensing in phase change memory
US8897063B2 · kind B2 · utility
12Cited by
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7Claims
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Key dates
| Filing date | Mar 24, 2014 |
| Grant date | Nov 25, 2014 |
| Priority date | — |
| Expiry date | Mar 24, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods and systems for multi-bit phase change memories. Using differential sensing for memory reads provides advantages including improved temperature and drift resilience, improved state discrimination and increased storage density.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.