Method for forming self-aligned airgap interconnect structures
US8900988B2 · kind B2 · utility
17Cited by
47References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 15, 2011 |
| Grant date | Dec 2, 2014 |
| Priority date | — |
| Expiry date | Oct 31, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Devices and methods for forming a self-aligned airgap interconnect structure includes etching a conductive layer to a substrate to form conductive structures with patterned gaps and filling the gaps with a sacrificial material. The sacrificial material is planarized to expose a top surface of the conductive layer. A permeable cap layer is deposited over the conductive structure and the sacrificial material. Self-aligned airgaps are formed by removing the sacrificial material through the permeable layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.