Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus and non-transitory computer readable recording medium
US8901014B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2012 |
| Grant date | Dec 2, 2014 |
| Priority date | — |
| Expiry date | Sep 29, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of manufacturing a semiconductor device having a structure in which an oxide film and a nitride film are stacked. The method includes forming a stacked film having an oxide film and a nitride film stacked therein on a substrate in a processing container by alternately performing a first cycle and a second cycle a predetermined number of times, the first cycle comprising forming the oxide film by supplying a source gas, a nitriding gas and an oxidizing gas to the substrate in the processing container a predetermined number of times, and the second cycle comprising forming the nitride film by supplying the source gas and the nitriding gas to the substrate in the processing container a predetermined number of times, wherein the forming of the oxide film and the forming of the nitride film are consecutively performed while retaining a temperature of the substrate constant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.