Method of forming metal oxide hardmask
US8901016B2 · kind B2 · utility
517Cited by
9References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2011 |
| Grant date | Dec 2, 2014 |
| Priority date | — |
| Expiry date | Sep 24, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0337
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a metal oxide hardmask on a template includes: providing a template constituted by a photoresist or amorphous carbon formed on a substrate; and depositing by atomic layer deposition (ALD) a metal oxide hardmask on the template constituted by a material having a formula SixM(1-x)Oy wherein M represents at least one metal element, x is less than one including zero, and y is approximately two or a stoichiometrically-determined number.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.