Phase-change random access memory and method of manufacturing the same
US8901528B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | Dec 14, 2012 |
| Grant date | Dec 2, 2014 |
| Priority date | — |
| Expiry date | Feb 13, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A PCRAM device and a method of manufacturing the same are provided. The PCRAM device includes a semiconductor substrate, and a PN diode formed on the semiconductor substrate and including a layer interposed therein to suppress thermal diffusion of ions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.