Pseudomorphic high electron mobility transistor (pHEMT) comprising low temperature buffer layer

US8901606B2 · kind B2 · utility

Assignee

• Avago Technologies General IP (Singapore) Pte. Ltd. · SG

Inventors

• Nate Perkins · Fort Collins, US
• Jonathan K. Abrokwah · Tempe, US
• Hans G. Rohdin · Los Altos, US
• Phil Marsh · McBride, CA
• John Stanback · Fort Collins, US

Key dates

• Filing date: Apr 30, 2012
• Grant date: Dec 2, 2014
• Expiry date: Apr 30, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/411

Abstract

A pseudomorphic high electron mobility transistor (pHEMT) comprises: a substrate comprising a Group III-V semiconductor material; buffer layer disposed over the substrate; and a channel layer disposed over the buffer layer. The buffer layer comprises microprecipitates of a Group V semiconductor element. A method of fabricating a pHEMT is also described.