Transistor, semiconductor device, and semiconductor module including the same
US8901630B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2013 |
| Grant date | Dec 2, 2014 |
| Priority date | — |
| Expiry date | Apr 11, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/00
Abstract
A semiconductor device including a buried cell array transistor and an electronic device including the same are provided. The device includes a field region in a substrate and the filed region defines an active region. A first source/drain region and a second source/drain region are in the active region. A gate trench is between the first and second source/drain regions, and in the active region and the field region. A gate structure is within the gate trench. The gate structure includes a gate electrode, an insulating gate capping pattern on the gate electrode, a gate dielectric between the gate electrode and the active region, and an insulating metal-containing material layer between the insulating gate capping pattern and the active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.