CMOS devices and fabrication method

US8901675B2 · kind B2 · utility

Assignee

• Semiconductor Manufacturing International Corp. · CN

Inventors

• Weihai Bu · Shanghai, CN
• Wenbo Wang · Beijing, CN
• Shaofeng Yu · Plano, US
• Hanming Wu · Shanghai, CN

Key dates

• Filing date: Dec 14, 2012
• Grant date: Dec 2, 2014
• Expiry date: Dec 14, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/83135

Abstract

A method is provided for fabricating a CMOS device. The method includes providing a semiconductor substrate having a first active region and a second active region. The method also includes forming a first trench on the first active region using a first barrier layer and a second substitute gate electrode layer to protect a gate region on the second active region, followed by forming a first work function layer and a first metal gate in the first trench. Further, the method includes forming a second trench on the second active region using a second barrier layer to protect the first metal gate structure, followed by forming a second work function layer and a second metal gate in the second trench.