Patent · US Active

Graphene pressure sensors

US8901680B2 · kind B2 · utility

13Cited by
1References
8Claims
0Family size

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Inventors

Key dates

Filing dateApr 12, 2012
Grant dateDec 2, 2014
Priority date
Expiry dateApr 12, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/209
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

Semiconductor nano pressure sensor devices having graphene membrane suspended over cavities formed in a semiconductor substrate. A suspended graphene membrane serves as an active electro-mechanical membrane for sensing pressure, which can be made very thin, from about one atomic layer to about 10 atomic layers in thickness, to improve the sensitivity and reliability of a semiconductor pressure sensor device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.