Electronic device
US8901703B2 · kind B2 · utility
0Cited by
9References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 3, 2005 |
| Grant date | Dec 2, 2014 |
| Priority date | — |
| Expiry date | May 15, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/221
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The electronic device comprises a network of at least one thin-film capacitor and at least one inductor on a first side of a substrate of a semiconductor material. The substrate has a resistivity sufficiently high to limit electrical losses of the inductor and being provided with an electrically insulating surface layer on its first side. A first and a second lateral pin diode are defined in the substrate, each of the pin diodes having a doped p-region, a doped n-region and an intermediate intrinsic region. The intrinsic region of the first pin diode is larger than that of the second pin diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.