Process and apparatus for measuring the crystal fraction of crystalline silicon casted mono wafers
US8902428B2 · kind B2 · utility
4Cited by
12References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2012 |
| Grant date | Dec 2, 2014 |
| Priority date | — |
| Expiry date | Sep 9, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N21/59
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Provided are methods and apparatus for determining the crystal fraction of a casted-mono silicon wafer. A light source is directed at the wafer and the transmission or reflection is measured by a detector. An image of the wafer is generated by a processor and the crystal fraction is calculated from the generated image. The crystal fraction is correlated to the efficiency of the solar cell produced, allowing for the rejection of inferior wafers prior to processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.