Apparatus, system, and method for writing multiple magnetic random access memory cells with a single field line
US8902643B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 9, 2012 |
| Grant date | Dec 2, 2014 |
| Priority date | — |
| Expiry date | Jun 4, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1693
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device includes a plurality of magnetic random access memory (MRAM) cells, a field line, and a field line controller configured to generate a write sequence that traverses the field line. The write sequence is for writing a multi-bit word to the plurality of MRAM cells. The multi-bit word includes a first subset of bits having a first polarity and a second subset of bits having a second polarity. The write sequence writes concurrently to at least a subset of the plurality of MRAM cells corresponding to the first subset of bits having the first polarity, then subsequently writes concurrently to a remaining subset of the plurality of MRAM cells corresponding to the second subset of bits having the second polarity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.