Plasma processing apparatus and plasma processing method
US8906249B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 19, 2008 |
| Grant date | Dec 9, 2014 |
| Priority date | — |
| Expiry date | Aug 23, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3244
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A plasma processing apparatus includes a beam-shaped spacer 7 which is placed at an upper opening of a chamber 3 opposed to a substrate 2 to support a dielectric plate 8. The dielectric plate 8 is supported by the beam-shaped spacer 7. In the beam-shaped spacer 7 are provided a plurality of process gas introducing ports 31, 36 which have a depression angle θd and which are provided downward and directed toward the substrate 2, as well as a plurality of rare gas introducing ports 41 having a elevation angle θe directed toward the dielectric plate 8. Improvement of processing rates such as etching rate as well as effective suppression of wear of the dielectric plate 8 can be achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.