Apparatus and method for high-throughput chemical vapor deposition

US8906456B2 · kind B2 · utility

Assignee

• Aixtron, Inc. · DE

Inventors

• Piotr Strzyzewski · Herzogenrath, DE
• Peter Baumann · Tirschenreuth, DE
• Marcus Schumacher · Kerpen, DE
• Johannes Lindner · Roetgen, DE
• Antonio Mesquida Küsters · Baesweiler, DE

Key dates

• Filing date: Sep 26, 2013
• Grant date: Dec 9, 2014
• Expiry date: Sep 26, 2033

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/45551
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A device for depositing at least one especially thin layer onto at least one substrate includes a process chamber housed in a reactor housing and includes a movable susceptor which carries the at least one substrate. A plurality of gas feed lines run into said process chamber and feed different process gases which comprise layer-forming components. Said process gases can be fed to the process chamber in subsequent process steps, thereby depositing the layer-forming components onto the substrate. In order to increase throughput, the process chamber is provided with a plurality of separate deposition chambers into which different gas feed lines run, thereby feeding individual gas compositions. The substrate can be fed to said chambers one after the other by moving the susceptor and depositing different layers or layer components.