Photomask and method for forming pattern of semiconductor device using the same
US8906584B2 · kind B2 · utility
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1References
20Claims
0Family size
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Key dates
| Filing date | Mar 18, 2013 |
| Grant date | Dec 9, 2014 |
| Priority date | — |
| Expiry date | Jul 24, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/302
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a cell mask pattern disposed in a cell region of a mask substrate and a vernier mask pattern disposed in a vernier region of the mask substrate. The vernier mask pattern includes a variable mask pattern portion to transfer a different shape of pattern depending on the magnitude of exposure energy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.