Monitor test key of epi profile
US8906710B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2011 |
| Grant date | Dec 9, 2014 |
| Priority date | — |
| Expiry date | Jun 9, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for estimating a height of an epitaxially grown semiconductor material in other semiconductor devices. The method includes epitaxially growing first, second, and third portions of semiconductor material on a first semiconductor device, measuring a height of the third portion of semiconductor material and a height of the first or second portion of semiconductor material, measuring a first saturation current through the first and second portions of semiconductor material, measuring a second saturation current through the first and third portions of semiconductor material, and preparing a model of the first saturation current relative to the height of the first or second portion of semiconductor material and the second saturation current relative to an average of the height of the first and third portions of semiconductor material. The model is used to estimate the height of an epitaxially grown semiconductor material in the other semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.