Patent · US Active

Heteroepitaxial growth using ion implantation

US8906727B2 · kind B2 · utility

2Cited by

2References

24Claims

0Family size

Assignee

Varian Semiconductor Equipment Associates, Inc. · US

Inventors

Morgan Evans · Attleboro, US
Chi-Chun Chen · Hsinchu, TW
Cheng-Huang Kuo · Tainan, TW

Key dates

Filing date	Jun 13, 2012
Grant date	Dec 9, 2014
Priority date	—
Expiry date	Dec 9, 2032

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC30B29/403
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

In one embodiment, a method of growing a heteroepitaxial layer comprises providing a patterned substrate containing patterned features having sidewalls. The method also includes directing ions toward the sidewalls in an exposure, wherein altered sidewall regions are formed, and depositing the heteroepitaxial layer under a set of deposition conditions effective to preferentially promote epitaxial growth on the sidewalls in comparison to other surfaces of the patterned features.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.