Active matrix using hybrid integrated circuit and bipolar transistor
US8906755B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2013 |
| Grant date | Dec 9, 2014 |
| Priority date | — |
| Expiry date | Aug 21, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2102/3035
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A hybrid integrated circuit device includes a semiconductor-on-insulator substrate having a base substrate, a semiconductor layer and a dielectric layer disposed therebetween, the base substrate being reduced in thickness. First devices are formed in the semiconductor layer, the first devices being connected to first metallizations on a first side of the dielectric layer. Second devices are formed in the base substrate, the second devices being connected to second metallizations formed on a second side of the dielectric layer opposite the first side. A through via connection is configured to connect the first metallizations to the second metallizations through the dielectric layer. Pixel circuits and methods are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.