Method of manufacturing for semiconductor device using expandable material
US8906761B2 · kind B2 · utility
35Cited by
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19Claims
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Key dates
| Filing date | Mar 13, 2013 |
| Grant date | Dec 9, 2014 |
| Priority date | — |
| Expiry date | Mar 13, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is manufactured using an expandable material. The method includes forming a first gate insulating layer on a substrate, forming first and second gate structures on the first gate insulating layer, the first and second gate structures being spaced apart from each other at a distance, forming an expandable material on sidewalls and upper surfaces of the first and second gate structures, forming a gap-fill layer on the expandable material between the first and second gate structures, and performing a heat-treatment process to increase the volume of the expandable material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.