Sangbom Kang
7Patents
3h-index
21Co-inventors
53Inventor score
Filing activity: Oct 14, 2008 → Mar 12, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8906761B2 | Method of manufacturing for semiconductor device using expandable material | Electricity | 35 | Active |
| US8012828B2 | Recess gate transistor | Electricity | 18 | Active |
| US8835995B2 | Semiconductor devices including silicide regions and methods of fabricating the same | Electricity | 9 | Active |
| US8772115B2 | Semiconductor device having selectively nitrided gate insulating layer and method of fabricating the same | Electricity | 2 | Active |
| US10170622B2 | Semiconductor device including MOS transistor having silicided source/drain region and method of fabricating the same | Electricity | 1 | Active |
| US11004976B2 | Semiconductor device including MOS transistor having silicided source/drain region and method of fabricating the same | Electricity | 1 | Active |
| US10263109B2 | Semiconductor devices including silicide regions and methods of fabricating the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.