Method for transferring a thin layer of monocrystalline silicon
US8906780B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 21, 2011 |
| Grant date | Dec 9, 2014 |
| Priority date | — |
| Expiry date | Jun 21, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P20/582
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for transferring a thin layer of monocrystalline silicon from a free face of a monocrystalline silicon donor substrate having a thickness greater than that of the thin layer includes implanting ions through the free face to form a buried brittle layer in the silicon, using a polymer layer, bonding the donor substrate, by the free face, to a receiver substrate, and fracturing the thin layer from the donor substrate at the buried brittle layer by thermal fracture processing, and selecting conditions of implantation such that a thickness of the thin layer is smaller than 10 micrometers, and a thickness of the polymer layer is below a critical threshold defined as a function of energy and dose of the implantation, the critical threshold being less than or equal to the lesser of 500 nanometers and the thin layer's thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.