Asymmetric cyclic desposition etch epitaxy
US8906789B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 30, 2013 |
| Grant date | Dec 9, 2014 |
| Priority date | — |
| Expiry date | Apr 30, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/938
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present disclosure relates to a method of forming an epitaxial layer through asymmetric cyclic deposition etch (CDE) epitaxy. An initial layer growth rate of one or more cycles of the CDE process are designed to enhance a crystalline quality of the epitaxial layer. A growth rate of the epitaxial material may be altered by adjusting a flow rate of one or more silicon-containing precursors within a processing chamber wherein the epitaxial growth takes place. An etch rate may also be altered by adjusting a temperature or partial pressure of one or more vapor etchants, or the temperature within the processing chamber. In some embodiments, an initial layer thickness that is greater than a critical thickness of the epitaxial material for strain relaxation is achieved with a low growth rate, followed by a high growth rate for the remainder of epitaxial growth. Other methods are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.