Method of producing semiconductor transistor
US8906796B2 · kind B2 · utility
2Cited by
4References
6Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 2, 2011 |
| Grant date | Dec 9, 2014 |
| Priority date | — |
| Expiry date | Mar 2, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of producing a semiconductor transistor involving formation of an ohmic electrode on an active layer composed of a GaN-based semiconductor includes a process of forming a first layer 11 composed of tantalum nitride on an active layer 3 and a second layer 12 composed of Al layered on the first layer 11 and a process of forming ohmic electrodes 9s and 9d in ohmic contact with the active layer 3 by heat treating the first layer 11 and the second layer 12 at a temperature of from 520° C. to 600° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.