Apparatus and method for maskless patterned implantation
US8907307B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 11, 2011 |
| Grant date | Dec 9, 2014 |
| Priority date | — |
| Expiry date | Apr 19, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31711
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of implanting a workpiece in an ion implantation system. The method may include providing an extraction plate adjacent to a plasma chamber containing a plasma, such that the extraction plate extracts ions from the plasma through at least one aperture that provides an ion beam having ions distributed over a range of an angles of incidence on the workpiece. The method may include scanning the workpiece with respect to the extraction plate and varying a power level of the plasma during the scanning from a first power level to a second power level, wherein at a surface of the workpiece, a first beam width at a first power level is greater than a second beam width at a second power level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.