Optoelectronic semiconductor component

US8907359B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Martin Strassburg · Tegernheim, DE
• Lutz Höppel · Alteglofsheim, DE
• Matthias Peter · Orpund, CH
• Ulrich Zehnder · Regensburg, DE
• Tetsuya Taki · Miyoshi, JP
• Andreas Leber · Regensburg, DE
• Rainer Butendeich · Regensburg, DE
• Thomas Bauer · Schrobenhausen, DE

Key dates

• Filing date: Sep 16, 2009
• Grant date: Dec 9, 2014
• Expiry date: Sep 16, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002

Abstract

An optoelectronic semiconductor component comprising a semiconductor layer sequence (3) based on a nitride compound semiconductor and containing an n-doped region (4), a p-doped region (8) and an active zone (5) arranged between the n-doped region (4) and the p-doped region (8) is specified. The p-doped region (8) comprises a p-type contact layer (7) composed of InxAlyGa1-x-yN where 0≦x≦1, 0≦y≦1 and x+y≦1. The p-type contact layer (7) adjoins a connection layer (9) composed of a metal, a metal alloy or a transparent conductive oxide, wherein the p-type contact layer (7) has first domains (1) having a Ga-face orientation and second domains (2) having an N-face orientation at an interface with the connection layer (9).