High electron mobility transistor and method of manufacturing the same
US8907377B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 2013 |
| Grant date | Dec 9, 2014 |
| Priority date | — |
| Expiry date | Jan 29, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
Abstract
A higher electron mobility transistor (HEMT) and a method of manufacturing the same are disclosed. According to example embodiments, the HEMT may include a channel supply layer on a channel layer, a source electrode and a drain electrode that are on at least one of the channel layer and the channel supply layer, a gate electrode between the source electrode and the drain electrode, and a source pad and a drain pad. The source pad and a drain pad electrically contact the source electrode and the drain electrode, respectively. At least a portion of at least one of the source pad and the drain pad extends into a corresponding one of the source electrode and drain electrode that the at least one of the source pad and the drain pad is in electrical contact therewith.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.