Source/drain zones with a delectric plug over an isolation region between active regions and methods
US8907396B2 · kind B2 · utility
0Cited by
6References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 4, 2012 |
| Grant date | Dec 9, 2014 |
| Priority date | — |
| Expiry date | Oct 20, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/35
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Devices, memory arrays, and methods are disclosed. In an embodiment, one such device has a source/drain zone that has first and second active regions, and an isolation region and a dielectric plug between the first and second active regions. The dielectric plug may extend below upper surfaces of the first and second active regions and may be formed of a dielectric material having a lower removal rate than a dielectric material of the isolation region for a particular isotropic removal chemistry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.