Patent · US Active

MEMS inertial sensor and method for manufacturing the same

US8907434B2 · kind B2 · utility

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1References
20Claims
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Key dates

Filing dateApr 25, 2013
Grant dateDec 9, 2014
Priority date
Expiry dateJun 14, 2033

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01P15/125
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

A MEMS inertial sensor and a method for manufacturing the same are provided. The method includes: depositing a first carbon layer on a semiconductor substrate; patterning the first carbon layer to form a fixed anchor bolt, an inertial anchor bolt and a bottom sealing ring; forming a contact plug in the fixed anchor bolt and a contact plug in the inertial anchor bolt; forming a first fixed electrode, an inertial electrode and a connection electrode on the first carbon layer, where the first fixed electrode and the inertial electrode constitute a capacitor; forming a second carbon layer on the first fixed electrode and the inertial electrode; and forming a sealing cap layer on the second carbon layer and the top sealing ring. Under an inertial force, only the inertial electrode may move, the fixed electrode will almost not move or vibrate, which improves the accuracy of the MEMS inertial sensor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.