Magnetoresistive effect element, and magnetic random access memory
US8908423B2 · kind B2 · utility
2Cited by
4References
6Claims
0Family size
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Key dates
| Filing date | Nov 22, 2010 |
| Grant date | Dec 9, 2014 |
| Priority date | — |
| Expiry date | Dec 31, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/935
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive effect element includes: a The magnetization free layer includes: a first magnetization free layer being adjacent to the insulating layer and comprising Fe or Co; and a second magnetization free layer being adjacent to the first magnetization layer
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.