Patent · US Active

Polishing method, polishing apparatus and polishing tool

US8912095B2 · kind B2 · utility

5Cited by
4References
19Claims
0Family size

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Inventors

Key dates

Filing dateDec 14, 2010
Grant dateDec 16, 2014
Priority date
Expiry dateFeb 26, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/02024
  • WIPO fieldMachine tools
  • WIPO sectorMechanical engineering

Abstract

A polishing method and a polishing apparatus finish a surface of a substrate of a compound semiconductor containing an element such as Ga or the like to a desired level of flatness, so that the surface can be flattened with high surface accuracy within a practical processing time. In the presence of water, such as weak acid water, water with air dissolved therein, or electrolytic ion water, the surface of the substrate made of a compound semiconductor containing either one of Ga, Al, and In and a surface of a polishing pad having an electrically conductive member in an area of the surface which is held in contact with the substrate) are relatively moved while being held in contact with each other, thereby polishing the surface of the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.