Method and system for patterning a substrate
US8912097B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 19, 2010 |
| Grant date | Dec 16, 2014 |
| Priority date | — |
| Expiry date | Sep 1, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0337
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of patterning a substrate comprises providing an array of resist features defined by a first pitch and a first gap width between adjacent resist features. Particles are introduced into the array of resist features, wherein the array of resist features becomes hardened. The introduction of particles may cause a reduction in critical dimension of the resist features. Sidewalls are provided on side portions of hardened resist features. Subsequent to the formation of the sidewalls, the hardened resist features are removed, leaving an array of isolated sidewalls disposed on the substrate. The sidewall array provides a mask for double patterning of features in the substrate layers disposed below the sidewalls, wherein an array of features formed in the substrate has a second pitch equal to half that of the first pitch.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.