Organoaminosilane precursors and methods for depositing films comprising same

US8912353B2 · kind B2 · utility

Assignee

• AIR PRODUCTS AND CHEMICALS, INC. · US

Inventors

• Manchao Xiao · San Diego, US
• Mark Leonard O'Neill · San Marcos, US
• Heather Regina Bowen · San Diego, US
• Hansong Cheng · Singapore, SG
• Xinjian Lei · Vista, US

Key dates

• Filing date: May 24, 2011
• Grant date: Dec 16, 2014
• Expiry date: Sep 16, 2031

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/401
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Described herein are precursors and methods of forming dielectric films. In one aspect, there is provided a silicon precursor having the following formula I:wherein R1 is independently selected from hydrogen, a linear or branched C1 to C6 alkyl, a linear or branched C2 to C6 alkenyl, a linear or branched C2 to C6 alkynyl, a C1 to C6 alkoxy, a C1 to C6 dialkylamino and an electron withdrawing group and n is a number selected from 0, 1, 2, 3, 4, and 5; and R2 is independently selected from hydrogen, a linear or branched C1 to C6 alkyl, a linear or branched C2 to C6 alkenyl, a linear or branched C2 to C6 alkynyl, a C1 to C6 alkoxy, a C1 to C6 dialkylamino, a C6 to C10 aryl, a linear or branched C1 to C6 fluorinated alkyl, and a C4 to C10 cyclic alkyl group.