Patent · US Active

Integrated circuit assembly and method of making

US8912646B2 · kind B2 · utility

9Cited by

37References

10Claims

0Family size

Assignee

Silanna Semiconductor U.S.A., Inc. · US

Inventors

Michael A. Stuber · Carlsbad, US
Stuart B. Molin · Carlsbad, US
Mark Drucker · Poway, US
Peter Fowler · Bristol, GB

Key dates

Filing date	Dec 21, 2012
Grant date	Dec 16, 2014
Priority date	—
Expiry date	Dec 21, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/85
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An integrated circuit assembly includes an insulating layer having a having a first surface and a second surface. A first active layer contacts the first surface of the insulating layer. A metal bond pad is electrically connected to the first active layer and formed on the second surface of the insulating layer. A substrate having a first surface and a second surface, with a second active layer formed in the first surface, is provided such that the first active layer is coupled to the second surface of the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.