Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
US8913417B2 · kind B2 · utility
3Cited by
66References
20Claims
0Family size
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Key dates
| Filing date | Jul 24, 2012 |
| Grant date | Dec 16, 2014 |
| Priority date | — |
| Expiry date | Jun 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/883
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory cell is provided that includes a steering element, a reversible resistance-switching element coupled to the steering element and a silicide-forming metal layer disposed between the steering element and the reversible resistance-switching element. The reversible resistance-switching element includes tantalum, and is formed using a selective deposition process. Numerous other aspects are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.