Inventor · San Jose, CA, US

Brad Herner

11Patents
5h-index
11Co-inventors
59Inventor score

Filing activity: Aug 13, 2001 → Feb 11, 2013

Most-cited inventions

PatentTitleAreaCited byStatus
US6881994B2 Monolithic three dimensional array of charge storage devices containing a planarized surface Electricity 349 Expired
US7129538B2 Dense arrays and charge storage devices Electricity 163 Expired
US7824956B2 Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same Electricity 96 Active
US8233308B2 Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same Electricity 78 Active
US8558220B2 Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same Electricity 16 Active
US7902537B2 Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same Electricity 5 Active
US8236623B2 Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same Physics 5 Active
US8913417B2 Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same Electricity 3 Active
US8373150B2 Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same Electricity 1 Active
US7846785B2 Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same Electricity 1 Active
US8816315B2 Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.