Magnetic enhancement layer in memory cell
US8913424B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Sep 17, 2013 |
| Grant date | Dec 16, 2014 |
| Priority date | — |
| Expiry date | Sep 17, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Magnetic memory cell comprising two conductors and a magnetic storage element between the two conductors, wherein a magnetic enhancement layer (MEL) is provided in the proximity of at least along a partial length of at least one of the two conductors. The MEL is for enhancing a magnetic field in the element when the two conductors are energized. Methods for operation and fabrication process for the memory cell are also disclosed. The memory cell is particularly for use in magnetic random access memory (MRAM) circuits, when using magnetic tunnel junction (MTJ) stacks as the magnetic storage elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.