Pattern forming method
US8916053B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2012 |
| Grant date | Dec 23, 2014 |
| Priority date | — |
| Expiry date | Jun 20, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T156/1041
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A pattern forming method according to an embodiment includes: forming a pattern film on a first substrate, the pattern film having a concave-convex pattern, the pattern film being made of a material containing a first to-be-imprinted agent; forming a material film on a second substrate, the material film containing a second to-be-imprinted agent having a higher etching rate than an etching rate of the first to-be-imprinted agent; transferring the concave-convex pattern of the pattern film onto the material film by applying pressure between the first substrate and the second substrate, with the pattern film being positioned to face the material film, and by curing the second to-be-imprinted agent; detaching the first substrate from the pattern film; and removing the material film by etching, to leave the pattern film on the second substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.