Thin film wafer transfer and structure for electronic devices
US8916451B2 · kind B2 · utility
21Cited by
8References
20Claims
0Family size
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Key dates
| Filing date | Feb 5, 2013 |
| Grant date | Dec 23, 2014 |
| Priority date | — |
| Expiry date | Feb 5, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for wafer transfer includes forming a spreading layer, including graphene, on a single crystalline SiC substrate. A semiconductor layer including one or more layers is formed on and is lattice matched to the crystalline SiC layer. The semiconductor layer is transferred to a handle substrate, and the spreading layer is split to remove the single crystalline SiC substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.