Patent · US Active

III-nitride quantum well structure, a method for producing the same, and a light-emitting unit using the same

US8916458B2 · kind B2 · utility

1Cited by
0References
13Claims
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Key dates

Filing dateOct 18, 2013
Grant dateDec 23, 2014
Priority date—
Expiry dateOct 18, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H29/142
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An III-nitride quantum well structure includes a GaN base, an InGaN layer and an InGaN covering layer. The GaN base includes a GaN buffering layer, a GaN post extending from the GaN buffering layer, and a GaN pyramid gradually expanding from the GaN post to form a mounting surface. The InGaN layer includes first and second coupling faces. The first coupling face is coupled with the mounting surface. The GaN covering layer includes first and second coupling faces. The first coupling face of the GaN covering layer is coupled with the second coupling face of the InGaN layer. A method for manufacturing the III-nitride quantum well structure and a light-emitting unit having a plurality of III-nitride quantum well structures are also proposed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.