Semiconductor device fabrication method
US8916468B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 6, 2013 |
| Grant date | Dec 23, 2014 |
| Priority date | — |
| Expiry date | Jun 6, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13091
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A transistor formed on a semiconductor substrate is covered with a first insulating film, and first conductive vias which pierce the first insulating film and which reach the transistor and a second conductive via which pierces the first insulating film and which reaches an inside of the semiconductor substrate are formed. After the formation of the first conductive vias and the second conductive via, a second insulating film is formed over the first insulating film. Conducive portions connected to the first conductive vias leading to the transistor and a conductive portion connected to the second conductive via which reaches the inside of the semiconductor substrate are formed in the second insulating film. By doing so, a multilayer interconnection is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.