Method and system for non-destructive distribution profiling of an element in a film
US8916823B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2013 |
| Grant date | Dec 23, 2014 |
| Priority date | — |
| Expiry date | Nov 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/24585
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method to determine a distribution profile of an element in a film. The method comprises exciting an electron energy of an element deposited in a first film, obtaining a first spectrum associating with the electron energy, and removing a background spectrum from the first spectrum. Removing the background value generates a processed spectrum. The method further includes matching the processed spectrum to a simulated spectrum with a known simulated distribution profile for the element in a film comparable to the first film. A distribution profile is obtained for the element in the first film based on the matching of the processed spectrum to a simulated spectrum selected from the set of simulated spectra.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.