Bondable top metal contacts for gallium nitride power devices
US8916871B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2012 |
| Grant date | Dec 23, 2014 |
| Priority date | — |
| Expiry date | Sep 12, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An embodiment of a semiconductor device includes a gallium nitride (GaN) substrate having a first surface and a second surface. The second surface is substantially opposite the first surface, at least one device layer is coupled to the first surface, and a backside metal is coupled to the second surface. A top metal stack is coupled to the at least one device layer. The top metal stack includes a contact metal coupled to a surface of the at least one device layer, a protection layer coupled to the contact metal, a diffusion barrier coupled to the protection layer, and a pad metal coupled to the diffusion barrier. The semiconductor device is configured to conduct electricity between the top metal stack and the backside metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.