Silicon carbide epitaxial wafer and semiconductor device
US8916880B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 14, 2011 |
| Grant date | Dec 23, 2014 |
| Priority date | — |
| Expiry date | Jul 14, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0291
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device that can suppress deterioration in crystal quality caused by a lattice mismatch between a substrate and an epitaxial layer and that also can ensure a voltage sustaining performance, and a wafer for forming the semiconductor device. An epitaxial wafer of silicon carbide (SiC), which is used for manufacturing a semiconductor device, includes a low resistance substrate and an epitaxial layer provided thereon. The epitaxial layer is doped with the same dopant as a dopant doped into the substrate, and has a laminated structure including a low concentration layer and an ultrathin high concentration layer. A doping concentration in the low concentration layer is lower than that in the silicon carbide substrate. A doping concentration in the ultrathin high concentration layer is equal to that in the silicon carbide substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.