Semiconductor device and method for manufacturing semiconductor device
US8916881B2 · kind B2 · utility
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7Claims
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Key dates
| Filing date | Sep 10, 2013 |
| Grant date | Dec 23, 2014 |
| Priority date | — |
| Expiry date | Sep 10, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a semiconductor device includes a SiC layer of a first conductivity type, a SiC region of a second conductivity type, and a conductive layer of the second conductivity type. The SiC layer of the first conductivity type has a hexagonal crystal structure. The SiC region of the second conductivity type is formed in a surface of the SiC layer. The conductive layer of the second conductivity type is provided on the SiC region and is in contact with a portion of the SiC region including SiC of a cubic crystal structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.