Reliable contacts
US8916939B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2013 |
| Grant date | Dec 23, 2014 |
| Priority date | — |
| Expiry date | Aug 26, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/957
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a device is disclosed. The method includes providing a substrate prepared with first and second contact regions and a dielectric layer over the contact region. First and second vias are formed in the dielectric layer. The first via is in communication with the first contact region and the second via is in communication with the second contact region. A buried void provides a communication path between the first and second vias. The vias and buried void are at least partially filled with a dielectric filler. The partially filled buried void blocks the communication path between the first and second vias created by the buried void. The dielectric filler in the vias is removed, leaving remaining dielectric filler in the buried void to block the communication path between the first and second vias and contact plugs are formed in the vias.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.